l Superior switching performance l Low on resistance(Rdson≤0.55Ω) l Low gate charge (Typical Data:27.3nC) l Low reverse transfer capacitances(Typical:32.1pF) l 100% Sing.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
HPA600R550DN, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power sw.
Image gallery
TAGS
Manufacturer
Related datasheet
