l Superior switching performance l Low on resistance(Rdson≤0.55Ω) l Low gate charge (Typical Data:27.3nC) l Low reverse transfer capacitances(Typical:32.1pF) l 100% Sing.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

HPA600R550DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.

HPA600R120PC-G

HPA600R160PF-G

HPA600R1K0DN

HPA600R1K6DN

HPA600R280PC-G

HPA600R2K3DN

HPA600R380PC-G

HPA600R600PC-G

HPA600R700DN

HPA600R760MB

HPA600R800DN

HPA650R099PF-G

HPA650R190PC-G

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